According to Lidow (87). silicon power devices can longer provide these greatly needed performance features and are slowly being faced out with changing technology. Consequently, the decline of silicon power devices has seen the creation of Gallium nitride (GaN) devices. Many power conversion applications have adopted the new GaN devices offer better conductivity previously deemed impossible (Lutz 65). Gallium Nitride (GaN) – in contrast with the best silicon elective – will empower higher power thickness through the capacity to switch at high frequencies, and also accomplishing most astounding effectiveness through novel topologies, for example, the command hierarchy PFC. Higher recurrence operation can enhance control thickness by contracting the extent of latent parts and in addition sparing vitality on cooling the entire framework. Gallium Nitride switch execution highlights low charge and fantastic element execution in turn around conduction contrasted with Silicon FET alternatives, empowering more proficient operation in today’s applications at existing frequencies. The principle goal of this paper is to talk about the advancement in GaN innovation, for example, the improvement of another line of discrete gadgets with solid half extension ICs that guarantee to bring high recurrence execution.